| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00031 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2016-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba523f8e650f5a9aa088ed3e8abdba4f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97aea878e200b316d82c1dac99dde566 |
| publicationDate |
2020-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I689007-B |
| titleOfInvention |
Etching method |
| abstract |
An object of the invention is to improve the roughness of an etching pattern. The invention provides a method of etching a silicon-containing layer of an object to be processed through a mask pattern formed by etching, from a self-assembling block copolymer layer containing a first polymer and a second polymer laminated via an intermediate layer onto the silicon-containing layer, a second region containing the second polymer and the intermediate layer immediately below the second region, the method including a step of generating a plasma inside the processing chamber of a plasma processing device housing the object to be processed by supplying a process gas containing carbon C, sulfur S, and fluorine F to the processing chamber, and then forming a protective film on the mask and etching the silicon-containing layer using the produced plasma. |
| priorityDate |
2015-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |