| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32972
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2017-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_240b7c4768ce8d51eec6168a58ef3562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecfd5b134324133a9167ceca5aae7e14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5f92c6479b96e9f3778f94fdce64a0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67c78a3472dfaf4c325a3f77fc8453cc |
| publicationDate |
2019-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I678734-B |
| titleOfInvention |
Plasma processing device and method |
| abstract |
According to the present invention, it is possible to stably perform an etching process to a predetermined depth for a plurality of samples while suppressing the variability of the etching depth.n n n The present invention relates to a plasma processing apparatus including a processing chamber for etching an etched film using a plasma, a high-frequency power supply for supplying high-frequency power for generating the plasma, and monitoring light emission of the plasma. The monitor section further includes a correlation between the luminous intensity obtained when the deposited film deposited by plasma etching is removed through the plasma through the etched film, and the correlation between the amount of etching of the etched film and the luminous intensity. The calculation unit for estimating the amount of etching during the plasma etching as described above. |
| priorityDate |
2016-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |