| abstract |
A film forming method includes the steps of: supplying a Si-containing gas to a surface of a substrate, and adsorbing the Si-containing gas to the surface of the substrate; and activating a nitriding gas by supplying a first plasma to the substrate. The surface of the substrate, so that the Si-containing gas adsorbed on the surface of the substrate is nitrided to deposit a SiN film; and a modified plasma containing NH 3 and N 2 at a predetermined ratio is a second plasma A process of activating and supplying the surface of the substrate to modify the SiN film deposited on the surface of the substrate. |