http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I675256-B
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_663cad2cddb9415ae5ba8d9c99803cda |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 |
filingDate | 2016-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2019-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d6c4ca6f8a1cee642ff730d5951140e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_972e1746a30971302ad1d7d323ea5aa7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d579e1128b23ead5fa82dfac6527ed22 |
publicationDate | 2019-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-I675256-B |
titleOfInvention | Method for forming solder resist pattern |
abstract | The invention provides a method for forming a solder resist pattern capable of manufacturing a circuit substrate which does not generate residue of solder resist on a connection pad and has excellent electrical connection reliability. A method for forming a solder resist pattern includes, at least in sequence, the steps of forming a solder resist layer on a circuit substrate having at least a connection pad, and thinning the uncured solder resist layer to a thickness of the solder resist layer to the thickness of the connection pad. A step up to the thickness; characterized in that the solder resist layer contains at least (A) a polymer containing a carboxyl group, (B) a polymerizable compound, (C) a filler, and (D) a photopolymerization initiator, (A The polymer having a carboxyl group has an acid value of 80 to 150 mgKOH / g or the average particle diameter of the (C) filler is 1.1 times or more the surface roughness Ra on the connection pad. |
priorityDate | 2015-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 111.