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publicationDate 2019-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I674617-B
titleOfInvention Method for performing a plasma processing process after a plasma cleaning process
abstract Embodiments of the present disclosure include a method for in-situ chamber cleaning efficiency enhancement process of a plasma processing chamber for a semiconductor substrate manufacturing process. In one embodiment, a method for performing a plasma processing process after cleaning a plasma process includes the steps of: performing the cleaning process in a plasma processing chamber in which there is no substrate disposed therein; subsequent supply includes at least hydrogen A plasma processing gas mixture of a gas and / or an oxygen-containing gas into the plasma processing chamber; applying RF source power to the processing chamber to form a plasma from the plasma processing gas mixture; and Interior surface.
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