http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I670768-B

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filingDate 2015-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e44ad61cacbd1d8da2064aba42fe984b
publicationDate 2019-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I670768-B
titleOfInvention Plasma etching method
abstract The invention is a plasma etching method, which is a plasma etching method using a processing gas under plasma conditions, and is characterized by using at least one selected from the hydrofluoroethers represented by formula (I) as a processing gas. In formula (1), R represents a hydrogen atom or a fluoroalkyl group represented by C n F 2n + 1 ; m and n represent integers satisfying 1 ≦ m ≦ 3 and 3 ≦ (m + n) ≦ 4. According to the present invention, a plasma etching method can be provided, which is based on the etching of silicon oxides. Even without oxygen or hydrogen, a sufficiently high etching rate can be achieved while achieving the same performance as silicon nitride or silicon or organic materials. High etch selectivity.n n n C m F 2m + 1 -O-CH 2 -R (I)
priorityDate 2014-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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