http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I669827-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-542 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2013 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2031 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G9-2013 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
| filingDate | 2015-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50a4730c6f2d50ebed3004476d0ffb0f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d072f1629ca27adc6324af88e2d27d91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eaf8739795bdf2e93563d762937aa2c3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2eb739b6776a55830e77417c817cc0c8 |
| publicationDate | 2019-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I669827-B |
| titleOfInvention | Crystal growth control agent, method for forming p-type semiconductor fine particles or p-type semiconductor fine particle film, composition for forming positive hole transport layer, and solar cell |
| abstract | First, the present invention provides a crystal growth control agent capable of suppressing an increase in the crystal grain size of a p-type semiconductor and capable of chemically modifying the surface of the p-type semiconductor fine particles, a p-type semiconductor fine particle or a p-type semiconductor using the crystal growth control agent. A method for forming a semiconductor fine particle film, a composition for forming a positive hole transport layer of a solar cell, and a solar cell using the composition for forming a positive hole transport layer. Second, the present invention provides an organic salt (ionic liquid) having an anion other than a thiocyanate ion, which can promote crystallization and miniaturization of a p-type semiconductor, and can perform p-type semiconductors. A composition for forming a positive hole transport layer by chemically modifying the surface of a semiconductor fine particle, and a solar cell using the same.nn n n The crystal growth control agent related to the present invention is a compound that generates a thiolate anion by dissociation of a proton or a cation and at least one sulfur-containing compound selected from the group consisting of disulfide compounds (but thiocyanate (Except salt), and control the crystal growth of p-type semiconductor. |
| priorityDate | 2014-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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