| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76874
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2017-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_129173833d7e97174955f5104d0c14ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc154fce90be4cf9dfe36d2bdefda3eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdbe5a42c71bcc65d9e69408b312dac1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_064aae57d4f0c73a9a8b09ff130dab1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0eed4044f333059f927dd5d92d14c9f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_970af941ff540cde38116ee1eb47a4ef |
| publicationDate |
2019-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I669784-B |
| titleOfInvention |
Method of forming a contact plug |
| abstract |
A method of forming a contact plug includes forming an interlayer dielectric to cover a gate stack of a transistor, and the interlayer dielectric and the gate are stacked as part of a wafer. The interlayer dielectric is etched to form a contact opening, and the source / drain region of the transistor or the gate electrode in the gate stack is exposed through the contact opening. A conductive cap layer is formed to extend into the contact opening. Electrochemical plating is used to plate a metal-containing material on the conductive cap layer in the plating solution. The metal-containing material has a portion filled into the contact opening, and the sulfur content of the plating solution is less than about 100 ppm. The wafer is subjected to a planarization process to remove excess portions of the metal-containing material, and the remaining portion of the metal-containing material and the remaining portion of the conductive cap layer are combined to form a contact plug. |
| priorityDate |
2017-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |