| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31da94917d1067c89f7e22444c88a836 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2017-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25fa812220f703393fb2a657c91fa403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbaba51a9b84215bd6ad98a65789c922 |
| publicationDate |
2019-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I669746-B |
| titleOfInvention |
Gate cutting integration and related devices |
| abstract |
What is provided is a method and apparatus for forming a gate cut during RMG processing. A specific embodiment includes forming a Si fin positioned above the substrate; forming an STI layer positioned over the recessed, exposed upper portion of the substrate and the Si fin; forming perpendicular to the Si fin, separated by the STI region, located in the a polysilicon dummy gate electrode on the upper portion of the Si fin and located on the STI layer between the Si fins; forming a hard mask over the polysilicon dummy gate electrode; passing through the hard mask and the polysilicon dummy gate Etching the electrode to form a recess between some of the Si fins; oxidizing the exposed polysilicon on the side of the recess and any residual polysilicon remaining at the bottom end of one or more of the recess; Filling the recess; removing the polysilicon dummy gate electrode; and forming an RMG. |
| priorityDate |
2017-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |