| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2014-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ebd9214e2fbd5e16f5cf1dd8669258a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8796e55748ca5f60a19d1b3f134a3f3a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4a0979b376f798ac33909239383c646 |
| publicationDate |
2019-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I667707-B |
| titleOfInvention |
Dry etching method |
| abstract |
An object of the present invention is to provide a dry etching method for selectively isotropically etching each SiGe layer with respect to each Si layer in a dry etching method of plasma etching a sample having a structure in which Si layers and SiGe layers are alternately stacked. .nn n n The dry etching method of the present invention is a method for dry etching each SiGe film in which a laminated film of a Si layer and a SiGe layer is alternately repeated with respect to each Si layer by selective isotropic etching, characterized in that NF 3 gas is used. Each of the foregoing SiGe films is plasma etched by a pulse-modulated plasma. |
| priorityDate |
2013-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |