| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b19eaa8e535da4e4bceed99917a68153 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B2307-21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J2421-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B2457-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J2433-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J2425-006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J2483-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J2203-326
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B2307-558
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J2301-312 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B7-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J7-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B27-302 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301 |
| filingDate |
2014-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c815fe038d4139c7ee1f421780f235ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0764ed582fdfd7a17127784e5ee8e6f |
| publicationDate |
2019-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I661023-B |
| titleOfInvention |
Cutting film, dicing film for semiconductor wafer, substrate film for dicing, and method for manufacturing semiconductor wafer |
| abstract |
The cutting film of the present invention has a base material and an adhesive layer formed on the base material, and the melt tension of the base material at 200 ° C. is 80 mN or more. The dicing film for a semiconductor wafer according to the present invention includes a base material and an adhesive layer formed on one side of the base material, and the side of the adhesive layer side in the base material and the adhesive layer. The distance (L) from the surface opposite to the substrate is 20 μm or more and 75 μm or less. The dicing base film of the present invention includes a base material layer and a surface layer disposed on one of the main surfaces of the base material layer. The surface layer contains a polystyrene resin and a vinyl aromatic hydrocarbon-conjugated polymer. In the diene copolymer or a hydrogenated product thereof, the content of the polystyrene resin in the surface layer exceeds 50% by weight. |
| priorityDate |
2013-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |