| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5231c81de1a546c1d6a9325c10910ce |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28587 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28587
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28581
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2018-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abc0c2426936457b5419a63f85ce08a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_544365f3de1d4b384bc0759d73d19d47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3dc557edbdadaa3d23342443ef9cf9d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6842c2bc13aa94276c0fc8e8d191550 |
| publicationDate |
2019-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I658558-B |
| titleOfInvention |
Nitride structure having no gold contact and method of forming the same |
| abstract |
A semiconductor structure having a group III nitride semiconductor layer is disposed on a substrate. The multilayer electrical contact structure in contact with the Group III nitride semiconductor layer includes a gold-free contact layer in contact with the Group III nitride semiconductor layer; and a gold-free conductive etch stop layer electrically connected to the gold-free contact layer. The conductive vias pass through the substrate to the etch stop layer. The structure includes a plurality of electrode structures, each of which provides one of a corresponding source electrode structure, a drain electrode structure, and a gate electrode structure. The source electrode structure, the drain electrode structure and the gate electrode structure include: an electrical contact structure and an electrode contact. The electrode contacts have the same gold-free structure and have a coplanar upper surface. |
| priorityDate |
2017-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |