Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb2648e65ad8850515bd727a122f1186 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-00 |
filingDate |
2015-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fa79f2c1d649069e037fff74cee5556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afda3b3f97897be5834935e1a4125b5b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c96cfb101adb450c7f55b8099310c021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5399c40ae8c26d4a2275f4e54c670e1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29e7ba3729dc27cf4aaf4d7afd1974a8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a59365d496983ff4884692768e5919f |
publicationDate |
2019-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-I658509-B |
titleOfInvention |
Chemicals for TSV/MEMS/power component etching |
abstract |
The present invention discloses alternative chemical substances of cC 4 F 8 passivation gas in Bosch etching process and a method for using these chemical substances. These chemicals have the formula C x H y F z , where 1 x <7, 1 y 13 and 1 z 13. These alternative chemicals can reduce the RIE lag associated with deep silicon aperture etching. |
priorityDate |
2014-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |