| abstract |
A method of forming a uniform dense oxide coated on an aluminum component of a semiconductor processing apparatus, the method comprising cold spraying a layer of pure aluminum onto a surface of the aluminum component to a predetermined thickness. The coating of the uniform dense oxide is then formed on the pure aluminum layer by plasma electrolytic oxidation treatment, wherein the plasma electrolytic oxidation treatment subjects the pure aluminum layer to micro-plasma discharge, thereby forming a dense oxide coated on the aluminum. The layer of pure aluminum on the surface of the component. |