| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01008 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B9-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B7-0035 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2017-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_062f60f7709c5065fe2be086c91edea1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad3374d217c8a1b4845cd8fc00bd81f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50782dd8f62fecb777ea4d9cbe033593
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52a4a6c1f8f32c035b045045536d26c8 |
| publicationDate |
2019-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I650813-B |
| titleOfInvention |
Plasma processing method |
| abstract |
SUMMARY OF THE INVENTION It is an object of the present invention to provide a plasma processing method which can suppress the generation of a metal-based compound in the continuous processing of a product wafer.nn n n The present invention relates to a plasma processing method for plasma etching a sample in a metal processing chamber, characterized in that the sample is etched using a plasma, and the processing chamber is electrically etched after etching the sample. The slurry is washed, and after the plasma is washed, the processing chamber is subjected to a plasma treatment using a single gas containing S and O. |
| priorityDate |
2016-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |