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filingDate 2014-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d73fddeb26fc0eb13bbd594190fec5ec
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publicationDate 2019-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I647758-B
titleOfInvention Maskless hybrid laser scribing and plasma etching wafer cutting process
abstract Describe the maskless hybrid laser scribing and plasma etching wafer dicing process. In one example, a method for cutting a semiconductor wafer having a front surface having a plurality of integrated circuits on the front surface and having a passivation layer disposed between and covering the metal pillar / solder bump pairs of the integrated circuit Metal pillar / solder bump pair, the method involves laser scribe passivation without the use of a masking layer to provide a scribe to expose the semiconductor wafer. The method also involves etching the semiconductor wafer through a scribe line plasma to singulate the integrated circuit, wherein the passivation layer can protect the integrated circuit during at least a portion of the plasma etching. The method also involves thinning the passivation layer to partially expose the metal pillar / solder bump pair of the integrated circuit.
priorityDate 2013-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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