http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I641042-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G05B19-418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32926 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3299 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2014-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cabeb31fe8433fda9e8b884c3a66a94a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a02db22c3089c77bc2ed95a15d0bed8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10224d6238e68f25c74e0355ab3bc933 |
| publicationDate | 2018-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I641042-B |
| titleOfInvention | Multi-parameter etch rate modeling for chamber and chamber to chamber matching and its use |
| abstract | A method includes receiving a voltage and current measured at an output of an RF generator of a first plasma system, and calculating a first model etch rate based on the voltage, the current, and a power. The method further includes: receiving a voltage and current measured at an output of the RF generator of the second plasma system, determining a second model based on a voltage and current at an output of the RF generator of the second plasma system The etch rate, and the second model etch rate are compared to the first model etch rate. The method includes adjusting power at an output of an RF generator of a second plasma system to determine a first model associated with the first plasma system upon determining that the second model etch rate does not match the first model etch rate Etching rate. The method is performed by a processor. |
| priorityDate | 2013-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.