| abstract |
The subject of the present invention is to provide a photoresist material having a high sensitization effect and an effect of suppressing acid diffusion, and having good resolution, LWR, and CDU, and a pattern forming method using the photoresist material. A method for solving this problem is a photoresist material, which includes a base polymer and an alkali metal salt of a compound selected from tetraiodophenolphthalein, tetraiodophenolsulfophthalein, tetraiodofluorescein, and derivatives thereof. |