| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fec576c38e34882531ca37d6b922bf42 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-08 |
| filingDate |
2016-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d7422e268f9bffa99f0f8ee91bfe94f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e115c99800946ecb23d8698d67d034d1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07cbdf5f3f756988709a8e97a99e4c30 |
| publicationDate |
2018-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I631618-B |
| titleOfInvention |
Dry etching method, dry etchant, and method of manufacturing semiconductor device |
| abstract |
The present invention is a dry etching method characterized by using a plasma gas obtained by plasma-drying a dry etchant substantially containing only 1,3,3,3-tetrafluoropropene and an inert gas, and a photoresist. , yttrium oxide, ytterbium selectively etch yttrium nitride. |
| priorityDate |
2015-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |