| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31da94917d1067c89f7e22444c88a836 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2016-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9616168415a5a306077b38dea8eb452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3412cffaee5b3bbd9ec22be151e5c59 |
| publicationDate |
2018-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I630683-B |
| titleOfInvention |
Semiconductor device formed by closed epitaxial growth technique |
| abstract |
A semiconductor device comprising: an isolation region laterally defining an active region in a semiconductor substrate; a gate structure over the active region; and a sidewall spacer adjacent to a sidewall of the gate structure. An etch stop layer is disposed over a portion of the active region to cover the active region, an interlevel dielectric material is over the active region to cover the etch stop layer, and a source/drain region having a closed bump is located at the active The surface above the surface is in contact with the upper surface of the active area. a source/drain region of the hermetic ridge contacting at least a portion of a sidewall surface portion of the sidewall spacer and a sidewall surface of the etch stop layer and extending laterally therebetween, and a conductive contact member extending through the interlayer dielectric material It is in direct contact with the upper surface of the source/drain region of the closed ridge. |
| priorityDate |
2015-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |