| abstract |
The invention discloses a component of a semiconductor material processing chamber. The component may include a substrate and at least one anti-corrosive coating formed on a surface thereof. At least one anti-corrosive coating is a high-purity metal coating formed by a cold spraying technique. Anodized layers can be formed on high-purity metal coatings. The anodized layer includes the process-exposed surface of the device. The invention also discloses a semiconductor material processing device including one or more of the elements, the element being selected from the group consisting of a chamber gasket, an electrostatic chuck, a focusing ring, a chamber wall, an edge ring, a plasma limiting ring, and a substrate support. Group of objects, baffles, gas distribution plates, gas distribution rings, gas nozzles, heating elements, plasma screens, transport mechanisms, gas supply systems, lifting mechanisms, load lock chambers, door mechanisms, robot arms, and fasteners group. The invention also discloses a method for manufacturing the device and a method for using the device for plasma processing. |