| abstract |
According to an embodiment of the present invention, a semiconductor device and a method of manufacturing a semiconductor device capable of achieving miniaturization in a thickness direction are provided.nn n n The semiconductor device of the embodiment includes a first substrate, an aluminum pad, a first nickel electrode, a second substrate, a second nickel electrode, and a connection layer. The first substrate has wiring inside. The aluminum pad is placed in the surface layer of the first substrate and connected to the wiring. A part of the first nickel electrode is embedded in the first substrate and connected to the aluminum pad, and the top surface protrudes from the surface of the first substrate. The second substrate is laminated on the first substrate. A part of the second nickel electrode is embedded in the second substrate, and the top surface protrudes from the surface on the first substrate side of the second substrate. The connection layer is formed of a tin-containing alloy and is connected between the first nickel electrode and the second nickel electrode. |