http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I620247-B
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fbdc51c2665335e616caf341cdaa3d28 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
filingDate | 2016-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2018-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aca2247ecfb8e4092263a692934cbc37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a74fc765872d2c48c507c53e08a71bae |
publicationDate | 2018-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-I620247-B |
titleOfInvention | Method for forming through-silicon via etching and through-silicon via etching device |
abstract | The invention provides a method for forming a TSV and a TSV etching device. The method for etching and forming a through-silicon via on the back surface of a silicon substrate includes: placing the silicon substrate in a reaction chamber of a plasma etching device with the back surface facing upward, and forming a silicon material layer on the back surface of the silicon substrate. There is a hard mask layer, and a photoresist pattern is formed above the hard mask layer; using the photoresist pattern as a mask, the hard mask layer is etched to form a hard mask pattern; the remaining photoresist pattern is removed; The hard mask pattern is used as a mask to etch the underlying silicon material layer to initially form a through silicon via; remove the remaining hard mask pattern; globally etch the silicon material layer; and remove the silicon substrate from the reaction chamber. |
priorityDate | 2015-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.