| abstract |
According to another embodiment, a method for forming a transistor is provided, including the following steps: providing a substrate; providing a source on the substrate; providing a channel connected to the source; providing a drain connected to the channel; and providing a gate insulating layer, which Channels are adjacent; a gate electrode is provided adjacent to the gate insulating layer; a first interlayer dielectric layer is provided between the source and the gate; and a second interlayer dielectric layer is provided between the drain and the gate , Wherein at least one of the source, the drain, and the channel includes Sn of about 20 atomic% to 95 atomic%. |