http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I612578-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1eb9cd2af2f87dcf20b0fbbdfe79996e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2013-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96643b7d34ecbaad6fce64e62332c53d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eb63849aeb6f04608ad8884cc8a6f4a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0eef34c4a3146bf8aa9743d56bad15fe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b39c177b19aac998ac0f1681265c55a |
| publicationDate | 2018-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I612578-B |
| titleOfInvention | Highly selective polysilicon and removal of native oxide |
| abstract | Provided are methods and systems for removing a native silicon oxide layer on a wafer. In the non-sequential method, the wafer is provided with a native silicon oxide layer on the polycrystalline silicon layer. An etchant containing a hydrogen-based species and a fluorine-based species is introduced, exposed to the plasma, and flows onto the wafer at a relatively low temperature. The wafer is then heated to a slightly elevated temperature to substantially remove the native oxide layer. In the sequential method, the wafer is provided with a native silicon oxide layer. A first etchant containing a hydrogen-based species and a fluorine-based species is flowed onto the wafer. The wafer is then heated to a slightly elevated temperature so that the second etchant flows towards the wafer, and then the second etchant is exposed to the plasma to complete the removal of the native silicon oxide layer and start another process such as a polycrystalline silicon layer. Removal of one layer. |
| priorityDate | 2012-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.