http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I612577-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2013-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2b6ada098c577a21c1e29c7663d9007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a92ab29dd77c3f28f47652ba09e565b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89024707ac582296a48232f8196f3628 |
| publicationDate | 2018-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I612577-B |
| titleOfInvention | Semiconductor device manufacturing method and computer recording medium |
| abstract | Provided are a method for manufacturing a semiconductor device capable of efficiently forming a multi-stage stepped structure having a desired shape and a computer recording medium.nn n n A method for manufacturing a semiconductor device in which a multilayer film having a first film and a second film and a photoresist layer are laminated alternately is etched to form a stepped structure, which repeatedly performs the following steps: First step: The first film is plasma etched using the photoresist layer as a mask. The second step is to use a plasma processing device having at least an upper electrode and a lower electrode made of silicon, and apply a negative DC voltage to the upper electrode. In this state, the processing gas containing argon and hydrogen is plasmatized by high frequency applied to the lower electrode, and the photoresist layer formed on the substrate is exposed to the plasma; the third step: photoresist Layer trimming; and a fourth step: plasma etching of the second film after the third step. |
| priorityDate | 2012-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.