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filingDate 2007-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2018-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I611565-B
titleOfInvention Semiconductor device manufacturing method
abstract An object of the present invention is to suppress discharge of static electricity generated by peeling when an element forming layer including a semiconductor element is peeled off from a substrate. A release layer and an element formation layer are formed on the substrate. The support substrate that can be peeled off is then fixed to the upper surface of the element formation layer. The interface between the element forming layer and the peeling layer is peeled off by changing the shape of the element forming layer by the supporting substrate. At the time of peeling, a liquid is supplied to form a layer and a peeling layer which are gradually exposed by peeling off by a liquid such as pure water. The electric charges generated on the surfaces of the element forming layer and the peeling layer are diffused by the liquid, so that discharge due to peeling electrification can be eliminated.
priorityDate 2006-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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