http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I406334-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate | 2007-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2013-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7df98e92568d83c54d3d6aadfd6a8fd9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a685ba00ca0ea5d626fca9048b056bc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_773a544ddce1782a438f8f8b7547baf8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e2d21e0c557d8d24f922dc2173e6b6e |
publicationDate | 2013-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-I406334-B |
titleOfInvention | Plasma processing device |
abstract | A plasma processing apparatus having a processing chamber and a sample base, and processing a sample by using plasma generated inside the processing chamber, the processing chamber being located inside a vacuum container, the sample base being located inside the processing chamber, the sample being mounted on the sample base, the plasma processing apparatus including a component member configuring inner-side wall surface of the processing chamber, and having a dielectric portion on the inner-side wall surface, an exhaustion unit for exhausting the inside of the processing chamber, and an electric-field supply unit for supplying an electric field to the component member in a state where the plasma will not be generated inside the processing chamber, wherein magnitude of the electric field supplied from the electric-field supply unit is changed rapidly while exhausting the inside of the processing chamber by the exhaustion unit. |
priorityDate | 2007-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.