http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I287178-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9afd626b14ef4bfd1a0cbc8b5bae6a13 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2001-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2007-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9fd0bfc11e22ff59c2efb7fe6020eff0 |
| publicationDate | 2007-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I287178-B |
| titleOfInvention | Method for removing patterned layer from lower layer through reflow |
| abstract | A photo-resist mask (3) of organic compound is stripped off after the pattern transfer to a layer (2) thereunder, wherein the photo-resist mask (3) is firstly exposed to vapor of organic solvent for reducing the thickness through a reflow, and, thereafter, the photo-resist mask (3) is ashed in an oxygen plasma, whereby the dry ashing is completed within a short time period by virtue of the reduction of thickness. |
| priorityDate | 2000-10-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.