http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I266369-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2005-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3eab528af042660494df8450cc953539 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a56c4fbc9e1da6b441bd8e9a3ec9775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d88eee6782b7969f2d5e6c7a70eaf609 |
| publicationDate | 2006-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I266369-B |
| titleOfInvention | Etching method and etching device |
| abstract | The object of the present invention is to provide an etching method that can maintain high etching rate, while realizing etching of trench without forming pits or surface roughness on side walls of the trench. The solution of the present invention is to carry out plasma etching on a silicon substrate or a silicon substrate having a dielectric layer containing silicon oxides, which employs a mixed-gas plasma by adding a hydrogen-contained gas in a range of 5-16% of total gas flowrate of a mixed gas of SF6 and O2 or a mixed gas of SF6, O2, and SiF4 into the mixed gas to form silicon trench for the formation of grooves or holes. |
| priorityDate | 2005-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.