http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I253145-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E04C5-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2004-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ca8d6ea6c85e911240cba536f73744e |
| publicationDate | 2006-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I253145-B |
| titleOfInvention | Semiconductor device manufacturing method |
| abstract | A semiconductor device manufacturing method includes the steps of: forming first and second insulation films on a substrate provided with a first wiring; sequentially forming first to third mask layers on the second insulation film; forming a wiring groove pattern in the third mask layer; selectively processing the third mask layer, formed to project into the inside of the wiring groove pattern, into a tapered shape; forming a contact hole pattern in the second and first mask layer, and removing the tapered shape portions of the third mask layer; and forming wiring grooves in the second insulation film by etching using the third mask layer, and forming contact holes in the insulation film by etching and using the second and first mask layers. |
| priorityDate | 2004-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.