| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f063b8222ec3c8e746a415e7f364473 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-46 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate |
2004-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_834b104d67b745e9aeb14334da069b5b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8150e4b3a75df68e578d560f283abbe0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d015239b426b2198ef663f5df7e3c169 |
| publicationDate |
2005-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I240363-B |
| titleOfInvention |
Substrate isolation in integrated circuits |
| abstract |
Substrate isolation trench (224) are formed in a semiconductor substrate (120). Dopant (e.g. boron) is implanted into the trench sidewalls by ion implantation to suppress the current leakage along the sidewalls. During the ion implantation, the transistor gate dielectric (520) faces the ion stream, but damage to the gate dielectric is annealed in subsequent thermal steps. In some embodiments, the dopant implantation is an angled implant. The implant is performed from the opposite sides of the wafer, and thus from the opposite sides of each active area. Each active area includes a region implanted from one side and a region implanted from the opposite side. The two regions overlap to facilitate threshold voltage adjustment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I396257-B |
| priorityDate |
2003-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |