| abstract |
The present invention provides a manufacturing method for semiconductor, which includes the following steps: using silicon-containing organic composite with siloxane bonding or silicon-containing organic composite with CH3 base, H2O, configuring the flow rate ratio of H2O to silicon-containing composite above 4, and the pressure above 1.5 Torr to form the filming gas; applying electric power on the filming gas for plasma to induce the reaction, so as to form the low-k insulative layer (62) on the substrate (61) to be filmed; and, conducting plasma process on one of the processing gas containing at least He, Ar, H2 and heavy hydrogen; and, contacting the low-k insulative layer (62) with the plasma of the processing gas to manufacture the semiconductor device. |