Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_838fa37719b78d8d2c854cad80aaf9ee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f9e18b9bdd5e33541e1ca19e050aa8bf |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32596 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-448 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-448 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
filingDate |
2000-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4548dde22ce6e0ee97bb595d26073255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1031c14c4becfe90550ecc5ff9a3e6ef |
publicationDate |
2005-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-I232243-B |
titleOfInvention |
System and method for depositing inorganic/organic dielectric films |
abstract |
A system and method for depositing a dielectric film on the surface of a substrate is provided having a processing chamber with a substrate support for supporting a substrate and one or more gas inlets for conveying gases to the processing chamber. A first plasma source defining a first plasma zone within the chamber is provided, and a second plasma source defining a second plasma zone within said chamber is provided. Gases are separately ionized at different ionization levels in the first and second plasma zones, and these separately ionized gases react to form a dielectric film on the surface of the substrate. |
priorityDate |
1999-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |