| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2001-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26d9af0a1f549bbf664b3f457b597b79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de6995f038bc3196b39d99ee48ed1c5c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91d7d42ddf77f330dc7cfc0c7b13b555
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6e2323739f0cce2dc739103f37c42ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a48eadb2d6a28450bd4a281b10344e7 |
| publicationDate |
2005-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I230967-B |
| titleOfInvention |
Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system |
| abstract |
A method of removing metal-containing polymeric material and ion implanted or plasma damaged photoresist from a surface using a plasma jet system, by generating radicals having high energy and high density from atmospheric plasma by introducing a reactant gas to the plasma; and placing the surface at a distance from the plasma, whereby ionic reaction on the surface is minimized while the removing action of the radicals on the surface is maintained. |
| priorityDate |
2000-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |