http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I223351-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2003-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dee79e087e109f32b12fb70a129e6e19 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a84e6f093d5a4c5ff506a1f8d322b4f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_beb61c3803c8447fc544fc01efa063c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_860c35c7dad48ba25bf0a5789e0a1bdf |
| publicationDate | 2004-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I223351-B |
| titleOfInvention | Method for discharging wafer after dry etching metal layer |
| abstract | A method for discharging wafer after dry etching metal layer. First, a substrate with patterned metal layer is provided, and the surface of the patterned metal layer is covered with a patterned photoresist layer. Next, a dry etching is performed for stripping the patterned photoresist layer, and a vapor gas of H2O without providing RF power (RF POWER=0) is introduced for discharging remained charges which is produced both from forming the patterned metal layer and from dry etching the patterned photoresist layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110400749-A |
| priorityDate | 2003-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.