Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31667 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31663 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31533 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G65-4068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G65-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D165-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D3-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D171-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B9-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
filingDate |
2002-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2004-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cdc5676007ef9b809bd4bbc90547924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bee50e65447e045d4dacda0c23cbbbf7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e9c07f550c570b8daf40567a264d035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f07e51afdf7d05bd6286bcdce8196bfd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dda10a0dfb0879bc0808df5632c0e25 |
publicationDate |
2004-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-583289-B |
titleOfInvention |
Stacked film, insulating film and substrate for semiconductor |
abstract |
A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove. |
priorityDate |
2001-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |