http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-569344-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e68936d3fb435785c9dcd044cfe3b5d4 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate | 2002-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afc4ed1c317affe26c0c3c51ec63c7ba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c4a06911e7fb80488de0f2ad07699a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47df1d629095db103a2e90676479a3f9 |
| publicationDate | 2004-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-569344-B |
| titleOfInvention | Insulation-film etching system |
| abstract | This application discloses an insulation-film etching system that etches an insulator film on a substrate by a species produced in plasma. The apparatus comprises a process chamber in which the etching process is carried out, a substrate holder that is provided in the process chamber and holds the substrate, a gas introduction line to introduce a gas having an etching function into the process chamber, a plasma generator to generate the plasma of the introduced gas, and a transfer mechanism to transfer the substrate into the process chamber and to transfer the substrate out of the process chamber. The gas introduction line is capable of introducing a gas having a cleaning function to remove a deposited film on an exposed surface in the process chamber, instead of the gas for the etching. The system comprises a control unit that carries out the sequence control. According as the sequence control, the cleaning is carried out after the etching. |
| priorityDate | 2001-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419573697 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9397 |
Total number of triples: 21.