| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2002-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bad91758f66e2fc497650427fee763b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8e67fc13561b6ec4d14eb68a31c107a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ceaff3aab2c662cc1dcabe6dfe116a28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f7ae5758f9d734fa33e6efd146a19b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf798eb7276de7369ff76ba2deeb174a |
| publicationDate |
2003-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-567557-B |
| titleOfInvention |
Method of forming openings for avoiding the arcing effect |
| abstract |
The present invention provides a method of forming openings for avoiding the arcing effect, which comprises first providing a substrate and placing the substrate in an etching chamber; next, performing a plasma process to the substrate surface to neutralize the electricity to be neutral or positive; and then performing an anisotropic etching to form an opening on the substrate. |
| priorityDate |
2002-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |