| abstract |
A method of manufacturing a semiconductor device comprises the steps of patterning a coated organic insulation film and an insulation film formed of an organic metal polymer in the semi-thermoset state; etching the substrate organic insulation film with the organic metal polymer used as a mask by using a plasma gas formed mainly of oxygen; and providing a final thermosetting treatment to the insulation films. Therefore, a semiconductor device with substantially small interlayer capacitance capable of being operated at a high speed is realized. |