http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-543100-B

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filingDate 2002-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6a486ae22c14845d868ef5178c83c85
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publicationDate 2003-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-543100-B
titleOfInvention Plasma etching chamber and method for manufacturing photomask using the same
abstract A plasma etching chamber of a plasma etching apparatus used in an etching process for manufacturing a photomask and a method for manufacturing a photomask using the same. The plasma etching chamber includes an electrode having a supporting surface for supporting a photomask substrate and a top surface surrounding the supporting surface, a heat transfer element installed along a peripheral edge of the supporting surface, and a heater for supplying heat to the heat transfer element. In the method for manufacturing a photomask, a shading layer is formed on a transparent substrate. A photoresist layer pattern is formed on the shading layer to partially expose the shading layer. The shading layer is etched to form a shading layer pattern, using plasma with the photoresist layer pattern as an etching mask, under a state in which the temperature of at least one portion of the peripheral edge of the transparent substrate is maintained higher than a temperature at a center of the transparent substrate.
priorityDate 2001-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 28.