http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-535229-B

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filingDate 1997-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97008a742d5ca06641839234eb88fbb1
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publicationDate 2003-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-535229-B
titleOfInvention Methods and apparatuses for improving photoresist selectivity and reducing etch rate loading
abstract Disclosed is an inventive multiple-chemistry etching method suited for etching through selected portions of layers in a layer stack in a plasma processing chamber. The layer stack preferably includes at least an anti-reflective layer and a metallization layer disposed below the anti-reflective layer. The method includes a first etching step where the anti-reflective layer of the layer stack is at least partially etched with a first chemistry, the first chemistry comprising an etchant chemical and a polymer-forming chemical. Once the first etching step is complete, the method proceeds to a second etching step where at least part of the metallization layer of the layer stack is etched with a second chemistry different from the first chemistry.
priorityDate 1996-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.