http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-527640-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2001-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e52725d349d176b3a362493cc64e5561 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf2e74ce0996e2ed42a0b11d4e23f7b1 |
| publicationDate | 2003-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-527640-B |
| titleOfInvention | Method of preventing generation of photoresist scum |
| abstract | A kind of method for preventing generation of photoresist scum is disclosed in the present invention. Before performing lithography process onto the dielectric layer, a baking process is conducted onto the dielectric layer to remove water content or the solvent containing alkali contained inside the dielectric layer through a hot plate or a furnace under the temperature range of 100 to 400 DEG C and the pressure range 760 to 10<-6> Torr. Thus, the problems of poor etched profile and electric characteristic change of device caused by the residual photoresist scum generated by the photoresist pattern in the lithography process can be prevented. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103391686-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103391686-A |
| priorityDate | 2001-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.