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filingDate 2000-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df9ec093821ce3efd12f338b079e386a
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publicationDate 2003-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-524867-B
titleOfInvention A processing method of silicon epitaxial growth wafer and a processing apparatus thereof
abstract The present invention relates to provide a method for the preparation of silicon epitaxial growth wafer in which a planarization process by down stream type plasma etching and an epitaxial layer growing process are carried out by series, further relates to a silicon epitaxial growth wafer preparing apparatus comprising a vacuum room in which a plasma planarization chamber by plasma etching, an epitaxial layer growing chamber, a wafer aligning chamber, a wafer load lock chamber and a wafer transferring robot are contained.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I600071-B
priorityDate 1999-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 30.