http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-495884-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4583 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2000-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50a8f58ed3604d6878d41dd7e56e6289 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57b68c28c9050cb94ef512cce8b5396d |
| publicationDate | 2002-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-495884-B |
| titleOfInvention | Manufacture method of semiconductor device and semiconductor manufacture apparatus |
| abstract | In the case of filming the silicon nitride film from the source gas composed of the Bis tertiary butyl amino silane (BTBAS) and NH3, or in the case of filming the oxidative silicon nitride film from the source gas composed of the BTBAS, NH3 and N2O, the thickness uniformity of the formed film in substrate can be improved. A plurality of semiconductor wafers 16 are over lapped and received in the crystal inner tube 12, in the case of the source gas composed of the BTBAS and NH3 flow into the crystal inner tube 12 for filming the silicon nitride film on the semiconductor wafer 16 by CVD method, or in the case of the source gas composed of the BTBAS, NH3 and N2O flow into the crystal inner tube 12 for filming the oxidative silicon nitride film on the semiconductor wafer 16 by CVD method, the filming is performed in the condition that the distance a between the adjacent semiconductor wafer 16 equals to the distance b between the edge of the semiconductor wafer 16 and the side wall of the crystal inner tube 12. |
| priorityDate | 2000-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 42.