| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
1999-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4427f44629a8cc56948d97e036d3a177
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a14b2bb89425423f133a836d48f26a82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30494dfa78d8ec7f197bca990d719f7e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65ba41f70203e20273801dc26d5cf512
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b4a82af0f16378084a34e6ae0757842 |
| publicationDate |
2002-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-480632-B |
| titleOfInvention |
Method for producing a flat interface for a metal-silicon contact barrier film |
| abstract |
A method for forming a conductive contact having an atomically flat interface is disclosed. A layer containing cobalt and titanium is deposited on a silicon substrate and the resulting structure annealed in a nitrogen containing atmosphere at about 500 DEG C to about 700 DEG C. A conductive material is deposited on top of the structure formed on anneal. A flat interface, which prevents diffusion of conductive materials into the underlying silicon substrate is formed. The method can be used to form contacts for very small devices and shallow junctions, such as are required for ULSI shallow junctions. |
| priorityDate |
1998-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |