http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-471052-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32642 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 |
| filingDate | 2000-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2002-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1df3f7d17803875152ce46f5e3b4251a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff80a8ee8a4b091ee2f55ddee09ed264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcd41cef97f24d2ef67adf700586fecf |
| publicationDate | 2002-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-471052-B |
| titleOfInvention | Silicon focus ring and its manufacturing method |
| abstract | The object of the present invention is to provide a silicon focus ring which can prevent defects caused by impurities such as heavy metal or the like. This is a focus ring consisting of single crystal silicon used in a plasma device, and herein the concentration of oxygen between lattices contained in that focus ring is not less than 5x10<SP>17</SP> atoms/cm<SP>3</SP> and not more than 1.5x10<SP>18</SP> atoms/cm<SP>3</SP>. In manufacturing the focus ring used for the plasma device, this focus ring is manufactured by growing the single crystalline silicon, where the concentration of oxygen between lattices is 5x10<SP>17</SP> atom/cm<SP>3</SP> and not more than 1.5x10<SP>18</SP> atoms/cm<SP>3</SP>, by Czochralski method, and the single crystalline silicon is processed into annular form. |
| priorityDate | 1999-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.