| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6623826fb005ec2357960fdc6dcc8490 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0383
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2000-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dd81108ec170dcd2013979a1a3a38bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ce7ac5b255565e42a5657e7cc2928b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3840e8df4d805dc27e6c5a32f922077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93b0e0d8ced218a50dbece13fa6dbe0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc2b9e35cb9676d971fcdd1d95672cfe |
| publicationDate |
2001-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-459385-B |
| titleOfInvention |
Formation of controlled trench top isolation layers for vertical transistors |
| abstract |
A method for controlling isolation layer thickness in trenches for semiconductor devices includes the steps of providing a trench (14) having a conductive material (24) formed therein, forming a liner (36) on sidewalls of the trench above the conductive material, depositing a selective oxide deposition layer (40) on the conductive material and the sidewalls, the selective oxide deposition layer selectively growing at an increased rate on the conductive material (24) than on the liner (36) of the sidewalls and a top surface (43) and removing the selective oxide deposition layer except for a portion in contact (42) with the conductive material (24) to form an isolation layer on the conductive material in the trench. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6872619-B2 |
| priorityDate |
1999-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |