| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2000-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9be8f25626951ba3d00c6394b016061d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51ad99a919c5a820e45e8a6bfddc86e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfde10b8a3134fc4af983df62a85c0cf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a04a8d28f3f3036ae828a8c4b783e89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c22258770a81d9d635853a40efb53766 |
| publicationDate |
2001-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-457583-B |
| titleOfInvention |
Metallization etching techniques for reducing post-etch corrosion of metal lines |
| abstract |
A method for reducing polymer deposition on vertical surfaces of metal lines etched from a metallization layer disposed above a substrate. The method includes forming a hard mask layer above the metallization layer and providing a photoresist mask above the hard mask layer. The method further includes employing the photoresist mask to form a hard mask from the hard mask layer. The hard mask has patterns therein configured to form the metal lines in a subsequent plasma-enhanced metallization etch. There is also included removing the photoresist mask. Additionally, there is included performing the plasma-enhanced metallization etch employing the hard mask and an etchant source gas that includes Cl2 and at least one passivation-forming chemical, wherein the plasma-enhanced metallization etch is performed without employing photoresist to reduce the polymer deposition during the plasma-enhanced metallization etch. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8748323-B2 |
| priorityDate |
1998-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |