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filingDate 2000-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b05d1232940a6c0bbeecdb139c1e842b
publicationDate 2001-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-455948-B
titleOfInvention Process for etching an insulating layer and forming a semiconductor device
abstract Many variations of etches for insulating layers (114, 400, 422, 426) can be used. In one set of embodiments, an insulating layer (114, 400, 422, 426) is etched using an oxide etching component, a fluorine-scavenging component, and an organic etching component. In another set of embodiments, the insulating layer (114, 400, 422, 426) includes at least one atomic weight percent of carbon or hydrogen. That insulating layer is etched using an oxide etching gas and a nitrogen-containing gas. In yet another set of embodiments, an insulating layer (114, 400, 422, 426) is formed over semiconductor device substrate (100) having a diameter of at least approximately 300 millimeters. The insulating layer (114, 400, 422, 426) is etched using an oxide etching gas and a nitrogen-containing gas.
priorityDate 1999-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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